| 摘要 |
PURPOSE:To enhance resistance to plasma etching by selectively irradiating a specified resin film formed on a substrate with electron beams, and selectively dissolving off the irradiated parts with an aq. soln. or solvent. CONSTITUTION:Dimethylbenzyl methylenesuccinate polymer is mixed with a novolak resin by 10wt%, and diluted into methyl ''Cellosolve'' to prepare 10% soln. A 0.5-1mum thick photosensitive resin film 2 is obtained by coating a substrate 1 having a surface to be processed, by the spin coating method with said soln. The photosensitive resin film 2 is heated at 90-100 deg.C for 40-60min and its prescribed region is imagewise exposed, and further developed to form the positive pattern having holes 3 in the region of the resist film dissolved by the exposure to electron beams. |
