| 摘要 |
PURPOSE:To reduce the static capacitance of a conductor pattern by a method wherein an insulating material layer having a smaller dielectric constant than a sealing material is interposed between the pattern and the sealing material. CONSTITUTION:The conductor pattern 12 is formed over the first insulation substrate 11 made of ceramic by the vapor deposition method or sputtering method. With respect to the upper cap sealing section, an insulation layer 15 made of ceramic is formed by the film-forming technique so as to cover the pattern 12. After the connection of the semiconductor IC is completed, the second insulation substrate 14 of ceramic the upper cap is welded to the first substrate 11 with the sealing material 13 (low melting point glass). Thus, the pattern 12 is isolated from the sealing material 13 by means of the insulation layer 15 of ceramic having a much smaller dielectric constant than the material 13, i.e., low melting point glass; therefore the static capacitance of the pattern 12 with each other largely decreases. |
