| 摘要 |
PURPOSE:To form required fine grooves in a wafer at a high etching speed without damage by promotion of etching reaction by impurity doping, heating in a gas atmosphere containing a halogen element, and photo irradiation. CONSTITUTION:The pattern of a mask 9 at the time of impurity doping is formed in the element-forming region 8 on an Si substrate 7, and the Si surface 10 of the region is thus exposed. Here, phosphorus ions 11 are implanted by the setting of dosage according to the depth of a neccessary fine groove. Next, the substrate 7 is high temperature-treated in order to activate it. The substrate is heated e.g. to 280 deg.C in a chlorine atmosphere 14, and the chlorine radical is produced on irradiation with the light of an Hg-Xe lamp. Thereby, etching advances, and the fine grooves 16 are formed. Thereafter, the mask 9 is exfoliated, SiO2 17 being buried as an insulator by deposition and then being made as the element-forming region. |
