EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To grow crystals of an even thickness without any protrusion on the periphery, by providing a melt inlet and a melt outlet on the side faces of walls of a substrate receiving chamber to equalize the thickness of the melt on the substrate. CONSTITUTION:A substrate receiving chamber 4a of a size approximately identical with the semiconductor substrate 1 is formed in a substrate holder 2a. A melt introducing groove 12 and a melt discharging groove 13 are formed on the both sides of and adjacent to the chamber 4a. There are intercommunications between the substrate receiving chamber 4a and the melt introducing groove 12 and between the chamber 4a and the melt discharging groove 13. The melt 5 within the chamber 4a can have an even thickness on the substrate 1, whereby a uniform crystal layer having an even thickness and favorable reproducibility can be grown over the whole substrate 1.