| 摘要 |
PURPOSE:To stabilize a contact resistance and to improve semiconductor propperties by a method comprising a beam annealing process of radiating energy beams to a silicide film. CONSTITUTION:A molybdenum silicide film 19 is deposited by spattering on a substrate 11 in which the electrode is provided with windows by self-alignment using the gate electrode 15 as a mask. Infrared annealing is applied for recrystallizing this silicide film 19. That is, infrared rays from halogen lamps provided around the treating chamber are radiated continuously for several seconds with an infrared radiation annealing device. Subsequently, a pure aluminium film 20 is deposited by spattering on the molybdenum silicide film 19, and contact electrodes 21 are formed by photo-etching.
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