| 摘要 |
PURPOSE:To form a thin film pattern on a semiconductor substrate by feeding a gaseous atmosphere onto the substrate, placing a selectively light transmitting mask parallel to the substrate, and irradiating light selectively on the substrate. CONSTITUTION:A semiconductor substrate 21 on which a thin film is formed is put in an atmosphere 24 of a reactive gas, and a mask 22 which transmits light only at parts corresponding to a pattern to be formed is placed over the substrate 21. Light is irradiated from lamps as light sources 25 arranged over the mask 22. The irradiated light is reflected from regions 23 which transmit no light on the mask 22, and it passes through the mask 22 at other parts. The passed light further passes through the atmosphere 24 and the substrate 21 to form selectively a thin film pattern 26 on the substrate by a photochemical reaction. |
