Process for etching deep trenches in silicon wafers having a flat surface

摘要

Along with the improved process for etching deep trenches in smooth silicon wafers using photomasks, the provision of a silicon oxide layer as adhesion promoter is proposed in order to improve the adhesion of the photoresist. The silicon oxide layer is produced by applying and dispersing a solution of adhesion promoter composed of alkoxysilanols and drying in air and then in a drying oven.