| 摘要 |
In a semiconductor integrated circuit device the conductive layers forming interconnecting lines are of three- layer construction consisting of a polycrystalline silicon layer (541), a silicide layer (551), of silicon and a refractory metal formed on the polycrystalline silicon layer, and a refractory metal layer (561), formed on the silicide layer. The refractory metal may be molybdenum, titanium tantalum, or tungsten. The polycrystalline layer is formed by a CVD method, the silicon and refractory metal layer is formed by a co-sputtering method, and the refractory metal layer is formed by sputtering. The gates (542, 552, 562) of MISFETs present in the integrated circuit are made in the same way and of the same materials as the interconnecting lines. A dynamic RAM using such a three layer construction for word lines is described. <IMAGE> |
