| 摘要 |
PURPOSE:To obtain an excellent photoconductive member by incorporating N and O in a photoreceptive layer composed of the two layers of the first amorphous layer contg. Si and the second amorphous layer contg. Si and Ge, and adding H or halogen, and a conductivity governing substance to at least one of boty layers. CONSTITUTION:The first amorphous layer 103 contg. Si and at least one of H and halogen is formed on a conductive substrate 101, and on this layer 103 the second amorphous layer 104 contg. Si and Ge, and at least one of H and halogen to obtain a photoconductive member having a laminate type photoreceptive layer 102. The layer 104 contains Ge in a distribution nonuniform in the film thickness direction and uniform in the plane direction in parallel to the layer face, and continuously decreasing toward the side of the substrate 101 or the free surface 100. N is incorporated in all the layer 102 to improve photoconductivity and adhesion between the layers, and further, O is incoporated to promote the effect of the addition of N. An element of group III, such as B, or an element of group V, such as P, for governing conductivity is incorporated to the layers 103, 104. As a result, the obtained photoconductive member are excellent in sensitivity, dark decay reistance, etc. |
