| 摘要 |
PURPOSE:To lessen the change in the electric resistivity of a semiconductor device and to prevent a hillock from generating by a method wherein a metal nitride layer is provided on the metal layer consisting of aluminum or an aluminum alloy. CONSTITUTION:An Al (or Al alloy) layer 5 and a titanium nitride layer 6 are continuously formed on the surface of an Si substrate 1, whereon a Si oxide film 4 having an opening part 3 is formed, by a sputtering method. Photo resist layers 7 are respectively formed on the surface in an electrode configuration and a processing is performed on the titanium layer 6 by a plasma etching method using a CF4-O2 mixed gas. Parts of the Al layer 5 are etched away using the photo resist layers 7 as masks by a CCl4-series dry etching method and lower wirings (first-layer Al wirings) 15 are formed. By this way, the change in the electric resistivity is reduced and the generation of a hillock can be prevented. |
