| 摘要 |
PURPOSE:To generate early plasma even at low voltage in a DC bipolar system sputtering apparatus by placing at least one gas introducing inlet at a position close to a target. CONSTITUTION:A DC bipolar system sputtering apparatus contains a substrate supporting stand 2 acting as an anode and a target 5 acting as a cathode in a divided chamber provided with a gas introducing pipe 7. A gas introducing pipe 9 is placed besides the pipe 7 so that the gas introducing inlet 9a of the pipe 9 is positioned by the side of the target 5 at about 5cm interval. Early plasma is well generated only by applying about 400V negative voltage to the target 5. |
