发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To bond both an inorganic insulator and metals and a metal excellently by using the evaporating source metal containing phosphorus. CONSTITUTION:An Al film 2 as an ohmic contact is formed to one part of the surface of a Si base body 1. The base body 1 and the surface of the film 2 are coated with a SiO2 film 3, and one part of the film 3 on the film 2 is not formed on a window. A Cr-Cu composite film 4 is bonded with the film 2 not coated with the film 3, and extended and bonded on the peripheral film 3. An evaporating source Cr for the film 3 contains phosphorus. When Cr and Cu for the film 3 are evaporated, phosphorus is evaporated together with Cr, the surface of the layer 3 is reduced while also being combined with Cr, Cr and Cu fill roles such as an inverter for the film 3 and a Cr layer, and adhesive force to the film 3 is ensured. The deacidifying action of phosphorus also contributes to adhesion between the film 2 and the Cr layer.
申请公布号 JPS6062115(A) 申请公布日期 1985.04.10
申请号 JP19830169196 申请日期 1983.09.16
申请人 HITACHI SEISAKUSHO KK 发明人 TSURUOKA MASAO;HORIUCHI JIYUNICHIROU
分类号 H01L21/28;H01L21/285;H01L21/31 主分类号 H01L21/28
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