| 摘要 |
PURPOSE:To produce the title element with excellent light emitting efficiency eliminating any current leakage channel by a method wherein, in a buried type semiconductor light emitting device with buried layers at both sides of a double hetero structure, the buried layers are composed of a lower layer comprising mixed crystal of InP or GaInAsP and an upper semi-insulating AlxGa1-xAs layer formed by organic metallic vapor growing process. CONSTITUTION:An N type InP layer 7 as a lower clad layer is coated with an active layer 8 whereon an N type upper clad layer 9 is deposited to form a double hetero structured light emitting element. Next both sides of the layer 9 including a part of the layer 7 are removed from the surface leaving the central part as a stripe. Later, the removed parts at both sides are buried in buried layers 10 to be current strangulating layers. At this time, the layers 10 are composed of a laminated body of a lower layer comprising non-doped InP or GaAsP coming into contact with the substrate 7 and an upper layer comprising semi- insulating AlxGa1-xAs. Through these procedures, the energy gap of the layers 10 may be augmented to restrict the current flowing therein. |
