| 摘要 |
<p>PURPOSE:To obtain the array of high mobility by a method wherein, when a thin film transistor matrix array to be used for the switching element for indication on an insulative substrate and the transistor to be used to drive said array, amorphous Si is used for the working layer of the array and a semiconductor material other than Si is used for the working layer for driving the array. CONSTITUTION:A gate pattern 5a consisting of NiCr, to be used for a transistor, is formed on a glass substrate 4 corresponding to a switching matrix part and a circumferential circuit part, and an SiO2 gate oxide film 6 and an amorphous Si film 7 are coated by lamination on the whole surface including said gate pattern 5a. Then, the film 7 is left on the matrix part only and the film 7 on the other region is removed by performing an etching using a resist film 8 as a mask, the film 8 is replaced by new film 8 which covers the whole surface, and an aperture is provided on the circumferential circuit part. Subsequently, a film 9 consisting of tellurium which is different from the Si film 7, cadmium sulfide, cadmium selenide and the like is coated on the exposed film 6, and the speed of mobility of the transistor on the matrix part is increased.</p> |
