| 摘要 |
PURPOSE:To obtain the high withstand voltage semiconductor device which can be operated at a high speed by a method wherein, when various kinds of field plates are provided on the semiconductor layer which constitutes a P-N-P-N element, the thickness of the insulating film to be positioned under said field plates is changed into three different kinds. CONSTITUTION:A concavity is provided on the surface of a supporting substrate, an insulating film 2 is coated on the side wall and the bottom face, and an N<+> type buried layer 51 is coated along the layer 2. Then, an N type layer 10 is buried in the layer 51, and a P type anode junction 41, a P type gate junction 42 and an N<+> type cathode junction 43 to be positioned in the gate junction 42 are formed in the layer 51. Subsequently, an insulating film 6 is coated on the whole surface, an electrode 85 of the prescribed form is provided thereon, a window is provided on the film 6, an anode electrode 81 to be linked to the electrode 85 is coated adjoining to the junction 41. A P-gate electrode 82 contacting the junction 42, a cathode electrode contacting the junction 43, and an N-gate electrode 84 contacting the layer 51 are provided in the same manner as above. At this time, the thickness of the film 6 directly below the wiring 85 is formed in the utmost thickness of T3, the part directly below the parts 81, 82 and 83 is formed in the most thin thickness of T1 and the part directly below the extended parts 801, 802 and 803 is formed in the intermediate thickness of T2. |
