| 摘要 |
PURPOSE:To obtain a property equal to that of a quaternary mixed crystal by laminating many times two or more kinds of dual compounds which have an equal lattice constant in a de Broglie's wavelength or less and making each thin film layer in a definite thickness. CONSTITUTION:In place of manufacturing a quaternary mixed crystal epitaxial film of one quaternary compsotion at point A which matches with the lattice of InP, a film of alternately an InP thin film and an In1-x'Gax'As (x'=0.45) thin film in a thickness ratio wherein the mean composition corresponds to a composition at point A is manufactured. In this case, the thickness ratio is selected so that a formula I is obtained if the thickness of the InP layer is dB and the thickness of the In1-x'Gax'As (x'=0.45) is dC. If these thin films are alternately, e.g. 200 periods, laminated, a nearly equal property of 900Angstrom deposition quaternary mixed crystal of the composition at point A can be obtained. Consequently, the property can be equal to that of the quaternary mixed crystal. |
