| 摘要 |
PURPOSE:To form a striped electrode with excellent adhesion and high reliability by a method wherein, when an electrode is to be fixed on the surface of a semiconductor close to an active region of a semiconductor laser, SiO2 and Si3N4 laminated films coated on the surface are removed corresponding to the active region to provide a laminated electrode comprising Ti, Pt and Au on an exposed cap layer. CONSTITUTION:A four element cap layer 13 is deposited on an active layer 14 comprising a semiconductor laser included in the layer 13 and the surface is covered with a laminated film comprising an SiO2 film 12 formed by CVD process and an Si3N4 film 11 formed by plasma CVD process. Next when a striped electrode 10 is formed on the surface, the laminated films located on the position corresponding to that of the active layer 14 are etched by buffered fluoric acid utilizing a photoresist film as a mask to expose the surface of the cap layer 13. Later overall surface may be coated with Ti around 1,500Angstrom thick, Pt around 1,200Angstrom thick and Au around 5,000Angstrom thick to form a striped metallic electrode film 10. |
