| 摘要 |
PURPOSE:To avoid deterioration of reflecting surfaces by a method wherein, when an active layer held by clad layers is provided on the crystal of a substrate, the region encircled by reflecting surfaces exposed to both ends of the active layer is composed of alternately laminated body comprising the first semiconductor layers with the thickness less than electronic wavelength and the second semiconductor layer with less electronic affinity than that of the first semiconductor layer and the thickness making it easy for the electrons in the first semiconductor layer to tunnel through. CONSTITUTION:One conductive type first clad layer 2, an active layer 3 and a reverse conductive type second clad layer 4 are laminated and grown on the crystal of a substrate 1 to be a semiconductor laser. In such a constitution, the region 31 encircled by reflecting surfaces 5 of both ends 34 of the active layer 3 is composed of alternately laminated body comprising the first semiconductor layers 32 with the thickness less than electronic wavelength and the second semiconductor layer with less electronic affinity than that of the first semiconductor layer and the thickness making it easy for the electrons in the laser 32 to tunnel through. Simultaneously, the both ends 34 including the reflecting surfaces may be formed of the mixed crystal similar to the mean atomic composition of the alternately laminated body. |
