| 摘要 |
PURPOSE:To make it easier to produce a laser with refractive index waveguide construction by a method wherein, when an InGaAsP/InP semiconductor laser is produced by liquid epitaxial growth, a groove with (111)A face as side is opened from (100) face of a substrate while a current strangulating layer and a beam guide layer are formed by one time growth making use of the difference in the growth characteristics of both surfaces. CONSTITUTION:A P type InP substrate 11 with a surface 11a containing a surface (100) is provided and a mask of an SiO2 film 12 with a stripe window 13 extending in the direction of <0, 1, anti 1> is provided on the surface 11a while a groove 14 with its side 14a to be (111)A surface and its bottom 14b swelled a little bit is formed by etching process using Br2-CH3OH solution. Later the film 12 is removed and firstly an N type InP current strangulating layer 15 is grown on the substrate 11 making use of the dependability of the growth of the substrate 11 and the groove 14 upon surface and secondly a P type InGaAsP beam guide layer 16, an InGaAsP active layer 17 and an N type InP clad layer 18 may be laminated to be grown all over the surface while burying the groove 14. |
