| 摘要 |
PURPOSE:To obtain a highly flat X-ray exposure film by compensating the stress of a heavy metal pattern constituting a transferred pattern and forming X-ray exposure masks always high in flatness independent of pattern density. CONSTITUTION:A thin film made of one of Si3N4, SiO2, and Al2O3 or a composite film of them is deposited on the surface of an Si single crystal substrate 1 by the CVD method or the like, and this thin film is formed into a desired window-framelike pattern 2 by using the wet system chemical technique. An Si3N4 film 3 of 1mum thickness is deposited on the other face of the substrate 1. A thin W film of about 100- several thousands Angstrom thickness is deposited on the film 3 by the sputtering method using, e.g. Ar, and further, an about 100- several thousands Angstrom thin W film is deposited by the CVD method using a gas mixture WF6 and H2. A pattern is formed on the thin W film 4 by using a resist. The substrate 1 of the obtained W pattern 4' is partially removed by using the pattern 2 as a protective film and an anisotropic etching soln., such as KOH, till the film 3 is disclosed, and an X-ray exposure film having the tapered legs of the substrate 1' is thus obtained. |
