SEMICONDUCTOR DEVICE ADAPTED FOR AVALANCHE PHOTODETECTOR AND METHOD OF PRODUCING SAME

摘要

High speed, high quantum efficiency, low dark current, and avalanche gain greater than 10 are exhibited by a long wavelength avalanche photodetector including in succession a terminal region of p-type indium phosphide (InP) a multiplication region comprising first and second layers of n-type indium phosphide (InP), a grading layer of n-type indium gallium arsenide phosphide (InGaAsP), and an absorption region of n-type indium gallium arsenide (InGaAs).