| 摘要 |
PURPOSE:To form efficiently GaAs layers having high uniformity under mild reaction conditions in a high yield using inexpensive starting materials by bringing vaporized GaCl2 and vaporized As (compound) into contact with substrates kept in a high energy state. CONSTITUTION:Ge wafers 9 are placed on a jig 8 as substrates, and GaCl2 is charged into an evaporator 18. A reaction tube 4 is evacuated with a vacuum pump 16 while introducing gaseous Ar 19. Gaseous Ar 2 contg. AsH3 is introduced, the introduction of gaseous Ar 19 is reduced, and the substrates are heated with an oven 3. At the same time, the GaCl2 in the evaporator 18 is heated with a heater 10. The substrates 9 are kept at 500 deg.C, and when the GaCl2 is heated to 190 deg.C, gaseous Ar is introduced from a pipe 1 for 0.5hr. After stopping the introduction, the heating with the oven 3 and the evacuation with the pump 16 are stopped, and the tube 4 is filled with a gaseous mixture of Ar with AsH3 under ordinary pressure. The tube 4 is then allowed to cool, and GaAs layers deposited on the substrates 9 are taken out. |
