| 摘要 |
PURPOSE:To enable to easily obtain a prescribed film thickness by a method wherein, in correction of a treating time, which is performed utilizing a growth rate of oxide film, calibration curves in the case of different treating conditions are utilized by finding a correction quantity of the treating time from a comparison of the predicted film thickness and the measured value using models of a reference calibration curve, etc. CONSTITUTION:Silicon wafers 2 are placed on a boat 3 in an oxidizing furnace 1. An oxide film thickness Zo previously set as the goal is given to an arithmetic unit 6, an oxidizing time to is calculated by the arithmetic unit 6, a wafer insert/ extract unit 4 is controlled through a control unit 7 and the wafers 2 are oxidized for the time to only. After an oxidation treatment was performed, a deviation DELTAZ is detected by a film thickness detecting unit 5, and on the basis of this result, the oxidizing time is corrected. In the oxidation treatment for the following batch, a new oxidizing time too is indicated to the control unit 7. |
