| 摘要 |
PURPOSE:To improve inter-layer insulating properties by thickly forming an oxide film on a first polycrystalline silicon film in the manufacture of a semiconductor device having double layer polycrystalline silicon electrode structure. CONSTITUTION:An oxide film 2 and a silicon nitride film 3 are formed on a substrate 1, and a first polycrystalline silicon film 4 containing an impurity and a resist 5 are shaped on the nitride film 3. The resist 5 is patterned, and the film 4 is etched while using the resist 5 as a mask and formed to a first gate electrode shape. The resist 5 is removed and an oxide film 8 is formed through oxidation, and the films 2, 3 are removed through anisotropic dry etching 9 while using the oxide film 8 as a mask. Lastly, a section on the substrate 1 and the film 8 are changed into an oxide film 10 through the thermal oxidation of the whole surface, and a second polycrystalline silicon film as a gate electrode not shown is formed on the oxide film 10. |
