发明名称 MANUFACTURE OF PHOTOELECTRIC CONVERSION SEMICONDUCTOR DEVICE
摘要 PURPOSE:To enable to reliably connect external lead electrode which is particularly liable to be deteriorated in the reliability by employing a laser scribing (LS) type. CONSTITUTION:After a light transmissive conductive film (CTF) is formed on an electrode region 5, scribing line grooves 13, 13' are formed by a YAG laser machine from the lower or upper side of this substrate, the portion between element regions and external lead electrode region are divided to form the first electrode 37. The external lead electrode region 5, the first element region 31 and the second element region 11 are formed. A non-signal crystal semiconductor 3 is formed over the entire surface of a CTF2 and the grooves 13, 13' in a uniform thickness, and the second groove 18 is formed at the left side of the first groove 13 is the second LS step. Thus, the groove 18 is exposed at the sides 8, 9 of the first electrode. The second electrode 4 is formed, the third groove 20 for cutting and isolating is formed by the third LS method, and a plurality of elements 31, 11 are connected in series at the connecting portion 12.
申请公布号 JPS6059784(A) 申请公布日期 1985.04.06
申请号 JP19830168554 申请日期 1983.09.12
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 YAMAZAKI SHIYUNPEI
分类号 H01L31/04;H01L27/142 主分类号 H01L31/04
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