| 摘要 |
The disclosure relates to a method of making contact with semiconductor devices by applying a metal layer, e.g. nickel or aluminum, onto an insulating layer, e.g. silicon dioxide, on the semiconductor material and onto the surface of the semiconductor material itself through windows in the insulating material and removing the part of the metal layer applied to the insulating layer by means of an adhesive strip, the metal layer having been treated, during or after its application, by heat to render it more firmly bonded to the semiconductor material than to the insulating layer.
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