发明名称 CONTINUOUS HOT DIPPING METHOD
摘要 PURPOSE:To control the concn. of impurities in a layer formed by hot dipping when a long-sized material is continuously hot dipped, by placing a small chamber through which the long-sized material is passed at a position close to the outlet of a hot dipping bath and by supplying a metal to the chamber. CONSTITUTION:A small chamber 3 through which a hot dipped material 1 is passed is placed at the outlet of a hot dipping bath or a position above the outlet. The chamber 3 is filled with a metal 5 or an alloy contg. no impurities for hot dipping, and the chamber 3 is replenished by means of an automatic supplier 6 when the metal 5 is taken out. Even when a material to be hot dipped is melted in the bath 2 to increase the amount of impurities in the bath 2, the impurities are not brought into the chamber 3, so the concn. of impurities in the metal 5 in the chamber 3 is kept low. Accordingly, the concn. of impurities in the metal 5 stuck to the material 1 is controlled. The surface of the bath in the chamber 3 is kept at a prescribed height by means of the supplier 6.
申请公布号 JPS6059058(A) 申请公布日期 1985.04.05
申请号 JP19830167217 申请日期 1983.09.09
申请人 SUMITOMO DENKI KOGYO KK 发明人 TAKANO SATORU;MIYAZAKI TAKESHI
分类号 C23C2/36;(IPC1-7):C23C2/36 主分类号 C23C2/36
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