| 摘要 |
<p>PURPOSE:To test a manufactured non-volatile semiconductor memory and to obtain the high reliability of the device by forming a testing circuit consisting of dummy cell groups connected to row/column lines selected only at the testing time and a peripheral circuit selecting the dummy cell groups. CONSTITUTION:The testing circuit including a row dummy cell group selecting means consisting of row dummy cell groups 23, 24 to be driven by row lines selected only at the testing time, dummy row decoders 20, 21 selecting the cell groups 23, 24 and a testing row address buffer 18, and a column dummy cell group selecting means consisting of a column dummy cell group 25 connected to a column line selected only at the testing time and formed in one column every I/O bit, a dummy column selector 22 selecting the cell group 25, a dummy column decoder 19, and a testing column address buffer 17 is formed. Thus, information is inputted/outputted to/from a memory cell matrix 16 on the basis of address inputs A0-Am.</p> |
