| 摘要 |
PURPOSE:To obtain the titled device of small parasitic capacitance by a method wherein a contact electrode and a gate electrode are composed of the structure of lamination of a polycrystalline Si layer containing an impurity in the lower layer and a metallic film or a metal silicide layer in the upper layer, and an inner wiring electrode is composed of the structure of lamination of a polycrystalline Si layer containing no impurity in the lower layer and a metallic layer of the same condition in the upper layer. CONSTITUTION:A thick field oxide film 2 for element isolation is formed in the periphery of a P type Si substrate 1, and a thin gate oxide film 7 is adhered to the substrate surface surrounded by that film. Next, the gate electrode 5 is provided at the center of the surface of the film 7. At this time, the electrode 5 is composed of the structure of lamination of the As-doped polycrystalline Si layer 41 of the lower layer and the TaSi2 layer 3 of the upper layer. Besides, the contact electrode 12 mounted on N type source and drain regions 8 and 9 provided on both sides of the layers is put in the same structure, and the inner wiring electrode 6 positioned above the film 2 and intersecting rectangularly to those is composed of a non-doped polycrystalline Si layer 42 of the lower layer and the same TaSi2 layer of the upper layer. |
