发明名称 |
Process for increasing the thickness of metallised areas on semiconductor power components or ceramic substrates |
摘要 |
To increase the thickness of metallised areas (7) on a substrate (8) or a semiconductor power component, a process is proposed in which the increase in thickness is achieved by electrodepositing metals. <IMAGE>
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申请公布号 |
DE3334419(A1) |
申请公布日期 |
1985.04.04 |
申请号 |
DE19833334419 |
申请日期 |
1983.09.23 |
申请人 |
BROWN,BOVERI & CIE AG |
发明人 |
AKYUEREK,ALTAN |
分类号 |
C25D17/06;H01L21/288;H01L21/48;H05K3/24;(IPC1-7):H01L21/60 |
主分类号 |
C25D17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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