发明名称 GAS SENSOR
摘要 PURPOSE:To obtain a thin-film type gas sensor element, whose gas selectivity is enhanced and diameter of the particle of a metal oxide material is extremely miniaturized, and which is manufactured by a sputtering method. CONSTITUTION:The film of super-minute particles, which is manufactured by a sputtering method, has sufficient strength on an insulating substrate. When the film is sufficiently thick, high gas selectivity can be provided. This is thought to be caused by the difference in gas permeability of the super-minute-particle film. The film of the sputtered, super-minute particles with the high gas selectivity is obtained. In the Figure showing the relationship between the particle diameter and the gas selectivity when the thickness of sputtered super minute SnO2 particle film is made to be 5mum, the gas selectivity is consicuously decreased when the particle diameter (a) exceeds 1mum at an operating temperature of 450 deg.C. With respect to the relationship between the thickness of the sputtered super-minute SnO2 particle film, the gas selectivity is conspicuously increased when the film thickness (b) exceeds 1mum. Thus the sensitivity in selection of the sputtered film of the metal oxide material against methane gas is enhanced, and the film can be used as a high performance gas sensor element.
申请公布号 JPS6058542(A) 申请公布日期 1985.04.04
申请号 JP19830166702 申请日期 1983.09.12
申请人 HITACHI SEISAKUSHO KK 发明人 KAWABUCHI YASUSHI;KIZAWA KENICHI;SUWA MASATERU
分类号 G01N27/12;(IPC1-7):G01N27/12 主分类号 G01N27/12
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