| 摘要 |
PURPOSE:To improve the yield of the titled device by etching of the electrode close to the active layer to the location before the etched layer by a method wherein semiconductor etching stop layers of the same conductivity type and different material compositions are laminated on the clad layer immediately on the active layer. CONSTITUTION:The p-InP clad layer 11, InGaAsP active layer 12, and p-InP clad layer 13 are laminated on an n-InP substrate 10, and the first and second grooves 14 and 15 are formed by normal photolithography. Next, the first current block layer 16 of p-InP and the second current block layer 17 of n-InP are successively formed. At this time, layers 16 and 17 are not grown on a mesa stripe 18, the grooves 14 and 15 being completely filled after growth of the layer 17, and the periphery on the stripe 18 being then formed into a flat recess. Then, the p-InGaAsP etching stop layer 19 is formed, and the yield of the title device is improved by etching to the location before the layer 19, the third groove 30 that splits the P type electrode 22 close to the active layer 12 into two or more in the direction of the resonator axis. |
