| 摘要 |
PURPOSE:To obtain capacitors for the titled device without the decrease in withstand voltage and the like even under high temperature heat treatment during the manufacturing process by a method wherein a high dielectric constant material film made of the oxide of 3A, 4A, and 5A groups of the periodic table of elements is formed on an Si substrate and heat-treated in an oxidizing atmosphere, thus generating an SiO3 film at the interface between the substrate and the film, and thereafter an electrode made of a high melting point metal containing N2 is provided on said film. CONSTITUTION:For example, a 130Angstrom thick Ta film is adhered on the Si substrate 1 by high frequency sputtering in an Ar atmosphere under a pressure of 4X10<-2>Torr. Next, a Ta2O5 film 2 of approx. 300Angstrom thickness is formed in the surface layer part of the Ta film by anodic oxidation or thermal oxidation, and is then heat treated in a wet oxidizing atmosphere at a temperature of 800 deg.C for about 10-30min, resulting in the generation of the SiO2 film 3 of about 80Angstrom thickness at the interface between the film 2 and the substrate 1. Thereafter, an N2-contained Mo film 4' of about 2,000Angstrom thickness is adhered on the film 2 by DC magnetron sputtering in the mixed gas of Ar and N2. |
