发明名称 HEAT PROCESSING FURNACE
摘要 PURPOSE:To make a plurality of heaters provided at the external circumference of reaction tube execute unifrom heating processing for an object of heat processing by independently controlling temperature of upper and lower sections of reaction tube. CONSTITUTION:A chemical vapor growth furnace has a reaction tube 1 consisting of a quartz tube and the reaction tube 1 is extending in horizontal, with the one end opening as the entrance of exit of port 2 while the other end formed as a thin tail tube 3. A cap 5 is attached to the aperture of reaction tube 1 through a packing 4 and a processing gas 7 is supplied to the opening side from a gas controller 6. Meanwhile, the tail tube 3 is connected to the vacuum exhaustion system. A resistance heating heaters are provided as a heater 9 at the external circumference of reaction tube 1 and the heater 9 is composed of an upper heater 10 for heating the upper part of reaction tube 1 and a lower heater 11 for heating the lower part of it. The heaters 10, 11 are freely capable of controlling the heating outputs of respective zones consisting of front areas 12, 13, center areas 14, 15 and rear areas 16, 17 with a temperature controller 19 and is also capable of executing uniform heat processing for the processing object.
申请公布号 JPS6058608(A) 申请公布日期 1985.04.04
申请号 JP19830166616 申请日期 1983.09.12
申请人 HITACHI SEISAKUSHO KK 发明人 ANDOU NORIO
分类号 H01L21/205;H01L21/18;H01L21/22 主分类号 H01L21/205
代理机构 代理人
主权项
地址