发明名称 TESTER OF STATIC ELECTRICITY INTENSITY IN SEMICONDUCTOR
摘要 PURPOSE:To enable continuous automatic operation removing accumulation of electric charge in the electrostatic capacity to the ground of a relay by grounding the connecting point of one of the terminals of a condenser and the relay. CONSTITUTION:The power source terminal 66 of a semiconductor device 6 to be tested is connected to the terminal which is not grounded of a condenser 4 by a charging-testing change-over switch 3 and also to one of the terminals of an ohmmeter 8. One of the terminals of plural relays 9 is also connected to the terminal which is grounded of the condenser 4 and the other terminals are connected to the terminals 61, 62, etc. for testing of the device 6. In a tester of static electricity intensity in semiconductor with such circuit construction, the relays 9 which have large electrostatic capacity to the ground are connected to the ground and no electric charge is accumulated in the capacity to the ground. Consequently, the electric charge discharged from the condenser 4 is absorbed in the capacity of the relays 9 to the ground and no disadvantage that an impulse voltage is not applied to the device 6 exists and continuous automatic operation becomes possible.
申请公布号 JPS6058630(A) 申请公布日期 1985.04.04
申请号 JP19830166517 申请日期 1983.09.12
申请人 FANUC KK 发明人 ISHIDA HIROSHI
分类号 H01L21/66 主分类号 H01L21/66
代理机构 代理人
主权项
地址