| 摘要 |
PURPOSE:To realize more anisotropic etching without delaying the etching time by utilizing three or more kinds of gases for the mixing gas for etching to be supplied to the plasma apparatus. CONSTITUTION:In the dry etching of polycrystalline Si (b) by the plasma apparatus, three kinds of gases of a gas (gas 1) which is characterized by shortening the etching time, a gas (gas 2) characterized by anisotropic etching and a gas (gas 3) having cooling effect are used as the mixed gas for etching. The characteristic of anisotropic etching by the gas 2 can be extracted more effectively by mixing the gas 3 to the mixed gas of gas 1 and gas 2. The slow etching time of gas 2 can be improved by mixing an adequate amount of gas 1. In the given Figure, (a) is resist pattern while (c) is a semiconductor substrate. |
