FET read only memory cell with with word line augmented precharging of the bit line.

摘要

An FET read only memory cell circuit (20) is disclosed wherein word lines (1, 2) serve to augment the precharging of the bit lines (A-D). If an FET read only memory site is preprogrammed as a binary one, (20(1,A)) for example, then when its word line (1) is pulsed, the bit line (A) will be insured to have an affirmatively high potential, representing a binary one state. This improves the reliability of the operation of the circuit by minimizing the effects of charge leakage from the bit line.