| 摘要 |
PURPOSE:To obtain a resin pattern having a form with no constriction part even when a thin-film has high surface reflectivity and there is a stepped section in the thin-film by executing treatment is which the surface reflectivity of the thin- film is inhibited immediately after the formation of the thin-film onto a semiconductor substrate. CONSTITUTION:A thin-film 4 having high surface reflectivity is formed on a semiconductor substrate 1, and thermally treated in a furnace having an oxygen atmosphere, thus shaping a reflection inhibiting treating layer 14 on the surface of the film 4. The reflectivity of said layer 14 is reduced up to approximately 70% through the heat treatment. A resin pattern 5a is formed through the application, exposure nd development of a photosensitive resin. The pattern 5a acquired in this manner is not constricted by excessive exposure at stepped sections 10a, 10b. Accordingly, constrictions at stepped-section corresponding sections 11a and 11b in a thin-film pattern 4a can be removed regarding the thin- film pattern 4a obtained through the selective etching removal of the thin-film 4 while using the pattern 5a as a mask and the removal of the pattern 5a. |
