| 摘要 |
PURPOSE:To reduce the contact resistance of a connecting section between a Si wiring and an Al wiring by previsouly forming a silicide film to the surface of the Si wiring of a predetermined shape, the inside of a contact section and the back of the Al wiring when an oxide film is applied on the surface of a semiconductor substrate, the Si wiring is formed on the oxide film and the Si wiring is coated with an iner-layer insulating film, the contact section is bored to the insulating film and the Al wiring connected to the Si wiring is shaped. CONSTITUTION:An oxide film 12 is formed on the surface of a semiconductor substrate 11, a Si wiring 13 of a predetermined shape is formed on the oxide film, and a silicide film 14 is applied on the surface of the Si wiring. An exposed section in the film 12 and the whole section on the film 14 are coated with an inter-layer insulating film 15, a contact section 16 is bored to a prescribed region, and the contact section is filled with a silicide film or a metallic film 17. The same film 17 is applied on the film 14 while being brought into contact with the film 17, and an Al wiring 18 is fitted on the film 17. In the constitution, both the films 14 and 17 are constituted by the silicide films consisting of molybdenum, tungsten, tantalum or titanium, and contact resistance is reduced. |
