| 摘要 |
PURPOSE:To sharply improve the operating frequency of the titled semiconductor device by a method wherein the thickness of an electron feeding layer is formed in such a manner that it will not be made larger than the sum of the thickness of the depletion layer extending from a controlling electrode and that of the depletion layer extending from the heterojunction between a channel layer and an electron feeding layer. CONSTITUTION:A GaAs channel layer 22 is grown on a substrate 20 using a molecular beam epitaxial growing method. Also, an impurity-doped AlGaAs electron feeding layer 21 having the smaller electron affinity than the layer 22 and a controlling electrode, provided on the layer 21, with which the carrier travelling on the semiconductor layer side interface located in the layer 22 will be transfer-controlled by applying voltage, are provided. A source electrode 31 consisting of gold, Ge and gold and a drain electrode 32 are provided on both sides of said electrode 30. At this point, the layer 21 is selected in the thickness which is less than the sum of the thickness of the depletion layer extending from the electrode 30 and the thickness of the depletion layer extending from the heterojunction between layes 21 and 22. |
