| 摘要 |
PURPOSE:To eliminate the possibility of breakdown of wirings and etc. even if the width of wiring is extremely narrow by forming plural wide parts in the predetermined intervals along a longitudial direction on the wiring. CONSTITUTION:On a surface of a substrate 1, the region doped with impurities by a low concentration is formed. On this region 2, a gate electrode pattern 3 which has wide parts 3A in some positions along its longitudinal direction is formed. The pattern 3 is coated with a plasma Si nitride fil 4 and a wiring 5 is in contact with the top surface of the wide part 3A of the pattern 3 through an opening 4a formed on the film 4 and the wiring 5 extends on the film 4. By this constitution, the mechanical strength of the pattern 3 is increased and a breakdown of it is prevented. |
