| 摘要 |
PURPOSE:To obtain a transistor without forming an electrode after formation of a junction by a method wherein a heat treatment is performed after a mixing substance of metal base, containing an element to be turned to P and N type impurities, has been coated on a semiconductor substrate. CONSTITUTION:Si, Zn and W are simultaneously vapor-deposited 4 on an N type GaAs substrate 1, and the Si, Zn and W are alloyed and diffused into the substrate by performing a high temperature treatment. As the coefficient of diffusion of Zn is larger than that of Si, a P-layer 2 is formed in the deep part by the compensation of Zn, and an N-layer is formed in the shallow part because the compensation of Si is larger, although Zn and Si are present together thereon. The vapor-deposited layer 4 is alloyed and turned to a W substrate, a Schottky contact is indicated at the temperature up to the 850 deg.C, an ohmic contact is indicated in excess of the above-mentioned temperature, and an N-emitter electrode of N-P-N structure is formed. According to this method, the metal substrate of the basic material of diffusion can be used as an emitter electrode, and the formation of a PNP or NPN junction in a small area can be performed, thereby enabling to easily accomplish a high integration. |
