发明名称 CORRECTING METHOD FOR DEFECT
摘要 PURPOSE:To prevent the dissipation of laser energy through a pattern film to improve the practical effect of energy, and to correct a fine pattern by small energy by foring a layer having low thermal conductivity between the pattern film on a photo-mask and a precipitated complex. CONSTITUTION:A Ta complex resin layer 14 and an Ag-Ta complex layer 15 are formed on the whole surface of a photo-mask 10 in which a predetermined pattern shape is formed on the surface of a transparent glass substrate 11 by a chromium film 12. When laser beams 16 are projected, the Ag-Ta complex layer 15 absorbs laser energy, Ag is precipitated to form an Ag precipitating layer 17 on a flake defect 13, the optical transmission of the flake defect 13 is corrected, and an accurate photo-mask pattern is obtained. A direct transmission over the chromium film 12 of laser energy projected to the Ag-Ta complex layer 15 is inhibited by the Ta complex resin layer 14 having low thermal conductivity, and the greater part of laser energy fed are utilized effectively for precipitating Ag.
申请公布号 JPS6057927(A) 申请公布日期 1985.04.03
申请号 JP19830164979 申请日期 1983.09.09
申请人 HITACHI SEISAKUSHO KK 发明人 KOIZUMI YASUHIRO
分类号 G03F1/00;G03F1/72;H01L21/027 主分类号 G03F1/00
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