发明名称 ELECTRON BEAM EXPOSURE METHOD
摘要 PURPOSE:To draw a pattern, which hardly displays a proximity effect and has high accuracy, in a short drawing time by drawing the pattern while varying acceleration voltage in response to the pattern. CONSTITUTION:A pattern is drawn while varying acceleration voltage in response to the size of the pattern. The pattern such as a pattern 1 (20mumX20mum) having size of not less than 1mum width is drawn is drawn by acceleration voltage of 10kv, and the pattern such as a pattern 2 (0.5mumX30mum) having size of less than 1mum width is drawn by using acceleration voltage of 80kv. Accordingly, exposure time may be reduced to one fourth times or less as long both the pattern 1 and the pattern 2 are exposed by 80kv, and the fine pattern in 0.5mum width can be formed by sufficient resolution because it is drawn by acceleration voltage of 80kv.
申请公布号 JPS6057926(A) 申请公布日期 1985.04.03
申请号 JP19830166998 申请日期 1983.09.09
申请人 MATSUSHITA DENSHI KOGYO KK 发明人 TODOKORO YOSHIHIRO
分类号 G03F7/20;H01L21/027;(IPC1-7):H01L21/30 主分类号 G03F7/20
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