| 摘要 |
PURPOSE:To enable to pick out the stabilized laser beams of different wavelength from the back side of a substrate in a single lateral mode and a single longitudinal mode by a method wherein a reflection coating film is formed into an array structure in the axis direction of a photo waveguide by changing the film thickness of the reflection coating film. CONSTITUTION:A stepping of refractive index is provided on both sides of an InGaAsP active layer in the direction parallel to the junction of a P type InP layer 25 and an N type InP layer 26, and the stabilization and simplification of a lateral mode of a current blocking layer is contrived. By the formation of a resonator surface 10, a resonator is divided into C1, C2 and C3, and a laser beam is picked out from the back side of a substrate. At this point, SiO2 vapor- deposited films 11a, 11b and 11c are provided, the gain of resonator interior is obtained by the reflection coating films (11a/12a) and (11b/12b), and the film thickness of Si vapor-deposited films 13a, 13b and 13c is changed, the laser beams lambda1, lambda2 and lambda3 of different wavelength can be obtained from the divided resonators C1, C2 and C3 through the reflection coating films (11c/13a), (11c/ 13b) and (11c/13c). |
