| 摘要 |
PURPOSE:To obtain a fine electrode wiring, and to improve the characteristics of a semiconductor device by constituting an electrode or a wiring being in contact with a diffusion region by Al while implanting Si ions to the electrode or the wiring when the region is formed to the surface layer section of a semiconductor substrate, an insulating film is applied on the whole surface containing the region, an opening is bored and the electrode or the wiring is formed. CONSTITUTION:A predetermined diffusion region 2 is formed to the surface layer section of an Si substrate 1, the whole surface containing the region 2 is coated with an SiO2 film 4, and an opening is bored made to correspond to the region 2. An Al film 8 consisting of pure aluminum is evaporated on the whole surface while burying the inside of the opening, Si ions are implanted to the film 8, and an Al-Si layer 9 is formed on the surface layer section of the film 8. Si in the surface layer section is diffused into Al thorugh annealing treatment, and a desired Al electrode 10 containing Si is formed through pattern etching by a photo-resist mask. Accordingly, Si residue is not generated completely while the intrusion of Al into the diffusion region is also prevented. |
