| 摘要 |
PURPOSE:To attain to enhance the withstand voltage, and to prevent wiring layers from disconnection at a step part with a simplified process at manufacture of a semiconductor device by a method wherein anisotropic etching is performed to an insulating film formed on a first wiring layer, and after patterning is performed, a second wiring layer is formed. CONSTITUTION:An oxide film 21 and a nitride film 22 are formed in order on the surface of a semiconductor substrate 20, and a window 23 is formed at the prescribed region. A field oxide film 24 is formed in the window 23, and after the nitride film 22 and the oxide film 21 are removed, a gate oxide film 25 and a first wiring layer 26 are formed, and after phosphorus is diffused therein, patterning is performed, and an insulating film 27 is formed. Anisotropic etching is performed thereto to expose the first wiring layer 26, and a part 27a of the insulating film 27 is left at the edge part thereof. After an oxide film 28 is formed thereon, the gate oxide film 25 is etched, and a second gate oxide film and a second wiring layer 29 are formed in order. Then, after phosphorus is diffused in the second wiring layer 29, pattering is performed, and the surface is covered finally with a CVD-SiO2 film and an Al-Si film having the prescribed patterns. |
