发明名称 MAGNETIC BUBBLE MEMORY ELEMENT
摘要 PURPOSE:To improve the dielectric strength between the signal line and the ground line by placing the signal side electric conductor pattern and the ground side electric conductor pattern which are electric conductor patterns controlling the magnetic babble, crossing different magnetic substance patterns, and enlarging the mutual distance between both electric conductor patterns. CONSTITUTION:The ground side electric conductor patterns 7b' is placed crossing under one magnetic substance pattern 5a of the read measure line 5 as well as conventionally and the signal side electric conductor pattern 7a' is formed and placed crossing under the other magnetic substance pattern 5b which is adjacent to the magnetic bubble transfer direction side. By such a constitution, the gap (g) of about 1mum between patterns is held between the magnetic substances 5a and 5b, therefore, the insulation resistance between the signal side electric conductor pattern 7a' and the ground side electric conductor pattern 7b' is heightneed, and consequently the dielectric strength can be remarkably improved and the operation voltage can be increased up to about 300V.
申请公布号 JPS6057591(A) 申请公布日期 1985.04.03
申请号 JP19830164950 申请日期 1983.09.09
申请人 HITACHI SEISAKUSHO KK 发明人 MATSUMOTO SHINZOU;HIROSHIMA MINORU;SEKINO MITSURU;NISHIDA HIDEKI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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