发明名称 |
Polymethyl methacrylate compatible silicon dioxide complexing agent |
摘要 |
An etching solution for the dissolution of silicon dioxide through a portable conformable mask, with PMMA as the etch stop layer, has been developed which eliminates resist lifting and non-uniform lateral etching, thereby providing the improved oxide edge definitions required for 1 micron line geometries in VLSI chips.
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申请公布号 |
US4508591(A) |
申请公布日期 |
1985.04.02 |
申请号 |
US19840587348 |
申请日期 |
1984.03.08 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
BARTLETT, KEITH G.;CAOLO, MARY A. |
分类号 |
C03C15/00;H01L21/311;(IPC1-7):B44C1/22;C03C25/06 |
主分类号 |
C03C15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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