发明名称 Semiconductor memory device
摘要 A semiconductor memory circuit includes a plurality of semiconductor memory areas, a plurality of data lines connected to the memory areas for the transfer of data with respect thereto, a plurality of word lines for transmitting access signals to the memory areas, a column decoder connected to the plurality of data lines and a row decoder having decoding sections respectively connected to the memory areas and switching MOS transistors connected between the decoder sections and a voltage supply terminal. The memory circuit further includes a memory selection circuit connected to the switching MOS transistors of said row decoders for controlling the conduction state of the switching MOS transistors.
申请公布号 US4509148(A) 申请公布日期 1985.04.02
申请号 US19830493605 申请日期 1983.05.11
申请人 TOKYO SHIBAURA DENKI KABUSHIKI KAISHA 发明人 ASANO, MASAMICHI;IWAHASHI, HIROSHI
分类号 G11C8/10;G11C11/4076;G11C11/408;G11C17/12;(IPC1-7):G11C11/40 主分类号 G11C8/10
代理机构 代理人
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